5通道(3路+V和2路-V)熱插拔參考設(shè)計(jì)
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圖6. -12V柵極關(guān)斷，沒有負(fù)載
Ch1 = Q8BASE, Ch2 = +3.3VGATE, Ch3 = +12VGATE, Ch4 = -12VGATE
注釋：-12V柵極關(guān)斷較慢；當(dāng)1 VGATE 3V (2.5V，典型值)時(shí)，F(xiàn)ET關(guān)斷。由此，正電壓通道關(guān)斷1ms至4ms后，-12V柵極完全關(guān)斷。
圖7. -12V負(fù)載關(guān)斷，150mA負(fù)載
Ch1 = Q8BASE, Ch2 = -12VGATE, Ch3 = -12VOUT, Ch4 = IIN(-12V)
注釋：雖然由于輸出電容放電導(dǎo)致VOUT(-12V)沒有達(dá)到0V，-12V輸入在4ms內(nèi)降到零。
圖8. -12V接通波形
Ch1 = Q8BASE, Ch2 = -12VGATE, Ch3 = -12VOUT, Ch4 = IIN(-12V)
注釋：接通順序，80Ω阻性負(fù)載 = 150mA。
圖9. -12V接通波形，沒有負(fù)載
Ch1 = Q8BASE, Ch2 = -12VGATE, Ch3 = -12VOUT, Ch4 = IIN(-12V)
注釋：IIN(PK) = 80mA，對輸出電容充電。
圖10. -5V接通波形，100Ω阻性負(fù)載 = 50mA
Ch1 = Q8BASE, Ch2 = -5VGATE, Ch3 = -5VOUT, Ch4 = IIN(-5V)
注釋：-5V擺率大約為1V/ms。
圖11. -5V接通波形，沒有負(fù)載
Ch1 = Q8BASE, Ch2 = -5VGATE, Ch3 = -5VOUT, Ch4 = IIN(-5V)
注釋：IIN(PK) = 55mA，對輸出電容充電。
圖12. +3.3V接通波形，沒有負(fù)載
Ch1 = Q8BASE, Ch2 = +3.3VGATE, Ch3 = +3.3VOUT, Ch4 = IIN(+3.3V)
注釋：IIN(PK) = 400mA，對輸出電容充電；+3.3V擺率大約為1V/ms。
圖13. +3.3V接通波形，1.1Ω負(fù)載 = 3A
Ch1 = Q8BASE, Ch2 = +3.3VGATE, Ch3 = +3.3VOUT, Ch4 = IIN(+3.3V)
圖14. +3.3V過流關(guān)斷
Ch1 = STAT1, Ch2 = VGATE (+3.3V), Ch3 = +3.3VOUT, Ch4 = IOUT(+3.3V) 0.5A/div
注釋：IOUT和VOUT減小是由于輸出電容向恒阻負(fù)載放電。測得的觸發(fā)電流為3.22A。*
圖15. +5V接通負(fù)載電容充電電流，沒有負(fù)載
Ch1 = Q8BASE, Ch2 = +5VGATE, Ch3 = +5VOUT, Ch4 = IIN(+5V)
注釋：IIN(PK) = 500mA，對輸出電容充電。
圖16. +5V接通電流，2.083Ω負(fù)載 = 2.4A
Ch1 = Q8BASE, Ch2 = +5VGATE, Ch3 = +5VOUT, Ch4 = IIN(+5V)
圖17. +5V過流關(guān)斷
Ch1 = STAT2, Ch2 = VGATE (+5V), Ch3 = +5VOUT, Ch4 = IOUT(+5V) 0.5A/div
注釋：IOUT和VOUT減小是由于輸出電容向恒阻負(fù)載放電。測得的觸發(fā)電流為2.87A。
圖18. +12V啟動(dòng)電流，沒有負(fù)載
Ch1 = Q8BASE, Ch2 = +12VGATE, Ch3 = +12VOUT, Ch4 = IIN(+12V)
注釋：IIN(+12Vpk) = 500mA，對輸出電容充電。
圖19. +12V接通電流，4Ω負(fù)載 = 3A
Ch1 = Q8BASE, Ch2 = +12VGATE, Ch3 = +12VOUT, Ch4 = IIN(+12V)
圖20. +12V過流關(guān)斷
Ch1 = STAT3, Ch2 = VGATE (+12V), Ch3 = +12VOUT, Ch4 = IOUT(+3.3V) 0.5A/div
注釋：IOUT和VOUT減小是由于輸出電容向恒阻負(fù)載放電。測得的觸發(fā)電流為3.1A。
圖21. 短路電路的+5V啟動(dòng)電流
Ch1 = Q8BASE, Ch2 = +5VOUT, Ch3 = +5VGATE, Ch4 = IIN(+5V)
注釋：觸發(fā)時(shí)的4A負(fù)載電流。
圖22. 短路電路的+12V啟動(dòng)電流
Ch1 = Q8BASE, Ch2 = VOUT, Ch3 = VGATE, Ch4 = IOUT
注釋：觸發(fā)時(shí)的5.7A負(fù)載電流。
測試PCB布板
更詳細(xì)的圖(PDF, 237kB)
圖23. 參考設(shè)計(jì)PCB元件布局
更詳細(xì)的圖(PDF, 330kB)
圖24. 頂層
圖25. 底層
材料清單
| Qty | Designator | Description | Manufacturer and Part Number |
| 5 | C1, C2, C3, C4, C5 | 1μF ±10%, 25V X7R ceramic capacitors (0805) | — |
| 3 | C6, C7, C18 | 10nF ±10%, 25V X7R ceramic capacitors (0805) | — |
| 1 | C8 | 56nF ±10%, 25V X7R ceramic capacitor (0805) | — |
| 1 | C9 | 68nF ±10%, 25V X7R ceramic capacitor (0805) | — |
| 1 | C10 | 100nF ±10%, 25V X7R ceramic capacitor (0805) | — |
| 1 | C11 | 47μF ±20%, 6.3V X5R electrolytic capacitor (1210) | TDK C3225X5R0J476M |
| 1 | C12 | 100μF +80%, -20%; 16V Y5V ceramic capacitor (2220) | TDK C5750Y5V1C107Z |
| 3 | C13, C14, C15 | 470μF ±20%, 16V electrolytic capacitors | — |
| 1 | C16 | 15nF ±10%, 25V X7R ceramic capacitor (0805) | — |
| 1 | C17 | 33nF ±10%, 25V X7R ceramic capacitor (0805) | — |
| 2 | D1, D2 | 75V, 200mW silicon diodes (SOD-323) | Diodes Inc. MMBD4148WS |
| 2 | Q1, Q2 | 20V, 4.9A, 33mΩ n-channel MOSFETs (SOT23) | Vishay Si2314BDS |
| 1 | Q3 | 30V, 6.9A, 33mΩ n-channel MOSFET (8-SO) | Vishay Si9410BDY |
| 2 | Q4, Q5 | 30V, 4A, 47mΩ n-channel MOSFETs (SOT23) | Vishay Si2306BDS |
| 2 | Q6, Q7 | 60V, 800mA bipolar PNP transistors (SOT23) | Fairchild MMBT2907 |
| 1 | Q8 | 40V, 1A bipolar NPN transistor (SOT23) | Fairchild MMBT2222A |
| 10 | R1, R2, R3, R4, R5, R24, R25, R26, R27, R32 | 100kΩ ±5%, 1/16W thick-film resistors (0805) | — |
| 1 | R6 | 1Ω ±5%, 1/16W thick-film resistor (0805) | — |
| 2 | R7, R9 | 0.008Ω ±1%, 1/4W thick-film resistors (2512) | —<
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